Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors |
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Authors: | Martin Dominik Heinzig Andre Grube Matthias Geelhaar Lutz Mikolajick Thomas Riechert Henning Weber Walter M |
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Institution: | Namlab gGmbH, Dresden, Germany. dominik.martin@namlab.com |
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Abstract: | This work elucidates the role of the Schottky junction in the electronic transport of nanometer-scale transistors. In the example of Schottky barrier silicon nanowire field effect transistors, an electrical scanning probe technique is applied to examine the charge transport effects of a nanometer-scale local top gate during operation. The results prove experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on band bending at the Schottky barriers will be shown. |
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