Asymmetric split-vacancy defects in SiC polytypes: a combined theoretical and electron spin resonance study |
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| Authors: | Ivády Viktor Gällström Andreas Son Nguyen Tien Janzén Erik Gali Adam |
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| Affiliation: | Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary. |
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| Abstract: | Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cubic polytype. Electron spin resonance study demonstrates the existence of ASV complex in niobium doped 4H polytype of SiC. |
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