Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions |
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Authors: | Naydenova Ts Dürrenfeld P Tavakoli K Pégard N Ebel L Pappert K Brunner K Gould C Molenkamp L W |
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Affiliation: | Physikalisches Institut EP3, Universit?t Würzburg, Am Hubland, D-97074 Würzburg, Germany. |
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Abstract: | We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies. |
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