Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Authors: | Lü Yuan-Jie Feng Zhi-Hong Gu Guo-Dong Dun Shao-Bo Yin Jia-Yun Wang Yuan-Gang Xu Peng Han Ting-Ting Song Xu-Bo Cai Shu-Jun Luan Chong-Biao Lin Zhao-Jun |
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Institution: | a National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;b School of Physics, Shandong University, Jinan 250100, China |
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Abstract: | Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current–voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity are analyzed and calculated by self-consistently solving Schrödinger’s and Poisson’s equations. It is found that the values of relative permittivity and polarization sheet charge density of AlN/GaN diode are both much smaller than the ones of AlGaN/GaN diode, and also much lower than the theoretical values. Moreover, by fitting the measured forward I–V curves, the extracted dislocations existing in the barrier layer of the AlN/GaN diode are found to be much more than those of the AlGaN/GaN diode. As a result, the conclusion can be made that compared with AlGaN/GaN diode the Schottky metal has an enhanced influence on the strain of the extremely thinner AlN barrier layer, which is attributed to the more dislocations. |
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Keywords: | Al(Ga)N/GaN strain relative permittivity Schottky metal |
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