Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer |
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Authors: | Yu Xiao-Peng Fan Guang-Han Ding Bin-Bin Xiong Jian-Yong Xiao Yao Zhang Tao Zheng Shu-Wen |
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Affiliation: | a Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;b Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China |
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Abstract: | The characteristics of a blue light-emitting diode(LED)with a p-InAlGaN hole injection layer(HIL)is analyzed numerically.The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power,a reduction in current leakage and alleviation of efficiency droop.These improvements can be attributed to the p-InAlGaN serving as hole injection layers,which can alleviate the band bending induced by the polarization field,thereby improving both the hole injection efficiency and the electron blocking efficiency. |
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Keywords: | InGaN light-emitting diodes (LEDs) p-InAlGaN hole injection layer (HIL) numerical simulation |
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