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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors |
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| Authors: | Ma Xiao-Hua Jiang Yuan-Qi Wang Xin-Hua Lü Min Zhang Huo Chen Wei-Wei Liu Xin-Yu |
| Institution: | a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Abstract: | This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors(HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode. |
| Keywords: | AlGaN/GaN high electron mobility transistor off-state stress electron detrapping degradation |
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