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The basis of organic spintronics:Fabrication of organic spin valves
引用本文:陈彬彬,姜生伟,丁海峰,蒋正生,吴镝.The basis of organic spintronics:Fabrication of organic spin valves[J].中国物理 B,2014,23(1):18104-018104.
作者姓名:陈彬彬  姜生伟  丁海峰  蒋正生  吴镝
作者单位:National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
基金项目:Project supported by the National Basic Research Program of China(Grant Nos.2010CB923402 and 2013CB922103);the National Natural Science Foundation of China(Grant Nos.11222435,10974084,and 11023002);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China;the Fundamental Research Funds for the Central Universities,China
摘    要:Organic spintronics focuses on utilizing the spin degree of freedom in organic materials because of the long spin relaxation time. The vertical organic spin valve (OSV) is a typical sample structure used to study the spin transport phenomena. However, the fabrication of high quality OSVs is difficult, which results in controversial experiment results and hence hinders the development of organic spintronics. In this work, we describe our recent study on the fabrication of typical vertical organic spin valves, La0.67Sr0.33MnO3 (LSMO)/Alq3/Co. The LSMO bottom electrodes are annealed to obtain an atomically smooth surface and improved magnetic properties. The top Co electrodes are deposited by an indirect deposition method to reduce the interfusion between Co and Alq3. The controlled fabrication process provides much better performance and sample yield of OSVs.

关 键 词:organic  spintronics  organic  spin  valves  magnetoresistance
收稿时间:2013-11-30
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