Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate |
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Authors: | Li Cong Zhuang Yi-Qi Zhang Li Jin Gang |
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Institution: | School of Microelectronics, Xidian University, Xi’an 710071, China |
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Abstract: | Based on the quasi-two-dimensional(2D) solution of Poisson's equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate(JLDMCSG) metal-oxide-semiconductor field-effect transistor(MOSFET) is developed. Using the derived model, channel potential distribution, horizontal electrical field distribution, and threshold voltage roll-off of JLDMCSG MOSFET are investigated. Compared with junctionless single-material CSG(JLSGCSG) MOSFET, JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage rolloff of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional(3D) numerical device simulator ISE. |
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Keywords: | junctionless device surrounding-gate MOSFET dual-material gate analytical model |
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