Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography |
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Authors: | Wu Kui Wei Tong-Bo Lan Ding Zheng Hai-Yang Wang Jun-Xi Luo Yi Li Jin-Min |
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Institution: | a Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China;
c National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract: | Wafer-scale SiO2photonic crystal(PhC)patterns(SiO2air-hole PhC,SiO2-pillar PhC)on indium tin oxide(ITO)layer of GaN-based light-emitting diode(LED)are fabricated via novel nanospherical-lens lithography.Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument.The light output power is enhanced by as great as 40.5%and 61%over those of as-grown LEDs,for SiO2-hole PhC and SiO2-pillar PhC LEDs,respectively.No degradation to LED electrical properties is found due to the fact that SiO2PhC structures are fabricated on ITO current spreading electrode.For SiO2-pillar PhC LEDs,which have the largest light output power in all LEDs,no dry etching,which would introduce etching damage,was involved.Our method is demonstrated to be a simple,low cost,and high-yield technique for fabricating the PhC LEDs.Furthermore,the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures. |
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Keywords: | InGaN light-emitting diodes (LEDs) photonic crystal nanosphere lithography FDTD simulation |
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