Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer |
| |
作者姓名: | 王建霞 汪连山 杨少延 李辉杰 赵桂娟 张恒 魏鸿源 焦春美 朱勤生 王占国 |
| |
作者单位: | Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
基金项目: | Project supported by the National Natural Science Foundation of China (Grant Nos.91233111,61274041,11275228,61006004,and 61076001);the Special Funds for Major State Basic Research Project (973 Program) of China (Grant No.2012CB619305);the 863 High Technology R&;D Program of China (Grant No.2011AA03A101);the Special Fund for LED Industrial Development of Guangdong Province of China (Grant No.2012A080302003) |
| |
摘 要: | The effects of V/Ⅲgrowth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated.The surface morphology,crystalline quality,strain states,and density of basal stacking faults were found to depend heavily upon the V/Ⅲratio.With decreasing V/Ⅲratio,the surface morphology and crystal quality first improved and then deteriorated,and the density of the basal-plane stacking faults also first decreased and then increased.The optimal V/Ⅲratio growth condition for the best surface morphology and crystalline quality and the smallest basalplane stacking fault density of a-GaN films are found.We also found that the formation of basal-plane stacking faults is an effective way to release strain.
|
关 键 词: | V/Ⅲ ratio a-plane GaN InGaN interlayer metalorganic chemical vapor deposition |
收稿时间: | 2013-07-18 |
本文献已被 CNKI 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|