| Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier |
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| 引用本文： | 马晓华,吕敏,庞磊,姜元祺,杨靖治,陈伟伟,刘新宇. Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier[J]. 中国物理 B, 2014, 23(2): 27302-027302. DOI: 10.1088/1674-1056/23/2/027302 |
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| 作者姓名： | 马晓华 吕敏 庞磊 姜元祺 杨靖治 陈伟伟 刘新宇 |
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| 作者单位： | a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| 基金项目： | Project supported by the Program for New Century Excellent Talents in University,China (Grant No.NCET-12-0915) |
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| 摘 要： | The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV measurements in a GaN-based HEMT with an AlGaN back barrier,a possible mechanism with electron-trapping and detrapping processes is proposed.Kink-related deep levels are activated by a high drain source voltage(Vds)and located in a GaN channel layer.Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization.Moreover,the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.
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| 关 键 词： | kink effect deep levels hot electrons GaN-based HEMT |
| 收稿时间： | 2013-05-05 |
Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier |
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| Ma Xiao-Hua,L,uuml,Min,Pang Lei,Jiang Yuan-Qi,Yang Jing-Zhi,Chen Wei-Wei,Liu Xin-Yu. Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier[J]. Chinese Physics B, 2014, 23(2): 27302-027302. DOI: 10.1088/1674-1056/23/2/027302 |
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| Authors: | Ma Xiao-Hua Lü Min Pang Lei Jiang Yuan-Qi Yang Jing-Zhi Chen Wei-Wei Liu Xin-Yu |
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| Affiliation: | a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | The kink effect in current–voltage (IV) characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current (DC) IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage (Vds) and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current. |
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| Keywords: | kink effect deep levels hot electrons GaN-based HEMT |
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