Spin and valley half metal induced by staggered potential and magnetization in silicene |
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Authors: | Wang Sa-Ke Tian Hong-Yu Yang Yong-Hong Wang Jun |
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Institution: | Department of Physics, Southeast University, Nanjing 210096, China |
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Abstract: | We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices. |
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Keywords: | silicene spin&ndash orbit interaction spin and valley half metal spin and valley blocking effect |
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