| 共溅射和离子注入制备的SiO2(Eu)薄膜中Eu3+到Eu2+的转变 |
| |
| 引用本文： | 刘丰珍,朱美芳,刘涛,李秉程. 共溅射和离子注入制备的SiO2(Eu)薄膜中Eu3+到Eu2+的转变[J]. 物理学报, 2001, 50(3): 532-535 |
| |
| 作者姓名： | 刘丰珍 朱美芳 刘涛 李秉程 |
| |
| 作者单位： | (1)中国科学技术大学研究生院物理系,稀土化学及应用国家重点实验室,北京100039; (2)中国科学院半导体研究所,北京100083; (3)中国科学院高能物理研究所同步辐射实验室,北京100039 |
| |
| 摘 要： | 采用共溅射方法和Eu离子注入热生长的SiO2方法得到SiO2(Eu)薄膜,Eu离子的浓度为4%和0.5%.对样品X射线吸收近边结构(XANES)的研究和分析表明,在高温氮气中发生了Eu3+向Eu2+的转变.SiO2(Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论关键词：2(Eu)薄膜')" href="#">SiO2(Eu)薄膜XANES
|
| 关 键 词： | SiO2(Eu)薄膜 XANES |
| 文章编号： | 1000-3290-2001-50(03)-532-04 |
| 收稿时间： | 2000-07-18 |
| 修稿时间： | 2000-07-18 |
THE TRANSITION FROM Eu3+TO Eu2+ IN SiO2(Eu) THIN FILMS PREPARED BY ION IMPLANTATION AND CO-SPUTTERING |
| |
| LIU FENG-ZHEN,ZHU MEI-FANG,LIU TAO and LI BING-CHENG. THE TRANSITION FROM Eu3+TO Eu2+ IN SiO2(Eu) THIN FILMS PREPARED BY ION IMPLANTATION AND CO-SPUTTERING[J]. Acta Physica Sinica, 2001, 50(3): 532-535 |
| |
| Authors: | LIU FENG-ZHEN ZHU MEI-FANG LIU TAO LI BING-CHENG |
| |
| Abstract: | Eu ions doped SiO2 thin films, SiO2(Eu), were prepared by co-sputtering of SiO2 and Eu2O3 and Eu ion implantation into thermally grown SiO2 films. The Eu-L3-edge X-ray absorption near edge structure (XANES) spectra of SiO2(Eu) films show a doublet absorption peak structure with energy difference of 7 eV, which indicates the conversion of Eu3+ to Eu2+ at-high annealing temperature in N2. The strong blue luminescence of SiO2(Eu) films prepared by ions implantation after films annealed above 1100 ℃ confirms the above argument. |
| |
| Keywords: | SiO2(Eu) films XANES |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
