退火温度对非晶铟钨氧薄膜晶体管特性的影响

非晶铟钨氧(a-IWO)薄膜晶体管(TFT)具有高迁移率和高稳定性的优点,但其适合于实际生产的制备工艺条件尚有待摸索。本文研究了退火温度对a-IWO TFT电学特性影响的基本规律和内部机理。实验结果表明,随着退火温度的升高,a-IWO TFT的场效应迁移率也相应增加,这是由于高温退火下a-IWO薄膜中氧空位含量增多并进而导致载流子浓度增加的缘故。此外,a-IWO TFT的亚阈值摆幅和阈值电压在200℃下退火达到最佳,我们认为主要原因在于此时a-IWO薄膜的表面粗糙度最小并形成了最佳的前沟道界面状态。

Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors

Amorphous indium tungsten oxide ( a-IWO) thin film transistors ( TFTs) show superior electrical performance and stable properties, but their industrial fabrication methods still need to be developed. In this study, the effect of annealing temperature on the electrical performance of a-IWO TFTs was investigated, where the related basic dependence and physical essence were involved. The experimental results indicate that the field-effect mobility of a-IWO TFTs increases gradually with the annealing temperature increasing, due to the more oxygen vacancies as well as the larger carrier con-centration at higher annealing temperatures. Meanwhile, annealing at 200 ℃ led to the best sub-threshold swing and threshold voltage of a-IWO TFTs, as is assumed to mainly result from the best front-channel interface caused by the smallest roughness of the a-IWO films annealed at 200 ℃.