| 在Si(100)上以AlN作过渡层低温外延生长ZnO薄膜 |
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| 引用本文： | 孙林林,刘宏玉,程文娟,马学鸣,石旺舟. 在Si(100)上以AlN作过渡层低温外延生长ZnO薄膜[J]. 人工晶体学报, 2005, 34(6): 1132-1136 |
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| 作者姓名： | 孙林林 刘宏玉 程文娟 马学鸣 石旺舟 |
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| 作者单位： | 华东师范大学物理系,上海,200062;华东师范大学物理系,上海,200062;华东师范大学物理系,上海,200062;华东师范大学物理系,上海,200062;华东师范大学物理系,上海,200062 |
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| 基金项目： | 上海市纳米专项基金资助（No.0352nm009） |
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| 摘 要： | 采用脉冲激光沉积(PLD)方法在Si(100)上成功生长了高度c轴取向的AlN薄膜,并以此为衬底,实现了ZnO薄膜的低温准外延生长.通过X射线衍射(XRD)、原子力显微镜(AFM)以及荧光分光光度计表征ZnO薄膜的结构、表面形貌和发光性能.结果表明,ZnO薄膜能在AlN过渡层上沿c轴准外延生长,采用AlN过渡层后,其荧光强度也有大幅提高.
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| 关 键 词： | 氧化锌薄膜 外延生长 过渡层 光致发光 |
| 文章编号： | 1000-985X（2005）06-1132-05 |
| 收稿时间： | 2005-05-15 |
| 修稿时间： | 2005-05-15 |
Low Temperature Epitaxial Growth of ZnO Films on Si(100) Substrates with AlN Buffer Layers |
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| SUN Lin-lin,LIU Hong-yu,CHENG Wen-juan,MA Xue-ming,SHI Wang-zhou. Low Temperature Epitaxial Growth of ZnO Films on Si(100) Substrates with AlN Buffer Layers[J]. Journal of Synthetic Crystals, 2005, 34(6): 1132-1136 |
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| Authors: | SUN Lin-lin LIU Hong-yu CHENG Wen-juan MA Xue-ming SHI Wang-zhou |
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| Affiliation: | Department of Physics, East China Normal University, Shanghai 200062 ,China |
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| Abstract: | Highly c-axis oriented AlN films were successfully prepared on Si(100) by pulse laser deposition,and quasi-epitaxial growth of ZnO films on the Si substrates with AlN buffer layers was realized.The structure and surface morphology of the deposited ZnO films were characterized by X-ray diffraction spectra and atomic force microscopy.XRD results show that epitaxial growth of c-axis oriented ZnO films with AlN buffer layers was obtained.Moreover,the intensity of photoluminescence of the ZnO films increased significantly. |
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| Keywords: | ZnO film epitaxial growth buffer layers photoluminescence |
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