Improved performances of the organic light-emitting devices by doping in the mixed layer |
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Authors: | Gao WB Sun JX Yang KX Liu HY Zhao JH Liu SY |
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Institution: | (1) National Lab of Integrated Optoelectronics, Jilin University, Changchun, 130023, P. R. China; |
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Abstract: | The brightness, efficiency and lifetime of organic light-emitting diodes (OLEDs) were remarkably improved by doping in a mixed layer. In this device, the emitting layer consists of a mixture of -naphthylphenybiphenyl amine (NPB), tris (8-hydroxyquinolinolate) aluminum (Alq3) (referred to as the mixed layer) and an emissive dopant 5,6,11,12-petraphenylnaphthacene (rubrene), where the concentration of NPB declined while the concentration of Alq3 was increased gradually in the deposition process. The device exhibited a maximum emission of 49,300 cd/m2 at a destroy voltage of 35 V and a maximum efficiency of 7.96 cd/A at 10 V, respectively. The efficiency improves twofold in comparison with the conventional doped devices. Meanwhile, the device exhibited superior operational stability with a half-life time of 1000 h at a starting luminance of 1000 cd/m2 by a constant current driver. |
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Keywords: | concentration doping efficiency lifetime |
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