酸碱性对雾化施液CMP氧化锆陶瓷的影响

采用精细雾化施液CMP这一抛光工艺对氧化锆陶瓷进行抛光,实验研究了抛光液中具有代表性的酸碱调节剂对抛光氧化锆陶瓷材料去除率、表面形貌和表面粗糙度的影响及酸碱性对精细雾化施液分散稳定性的影响.结果表明:针对精细雾化液抛光工艺配制的二氧化硅抛光液在碱性环境中分散稳定性更好,虽然酸性抛光液对材料去除率更高,但酸对氧化锆陶瓷表面腐蚀性过大,不宜抛光氧化锆陶瓷;有机碱作为调节剂抛光后的表面质量明显优于无机碱及无机酸、有机酸;乙二胺配置的碱性抛光液精细雾化后抛光氧化锆陶瓷可获得优质超光滑低损伤表面及较高加工效率,表面粗糙度Rq为1.67 nm,材料去除率达182.23 nm/min.

Effect of Acidity and Basicity on Zirconia Ceramics by Atomized Slurry CMP

The process of fine atomizing slurry CMP was adopted to polish the zirconia ceramics .The representative acid-base regular in slurry , which has an influence on the MRR, surface morphology and surface roughness for polished zirconia ceramic as well as the effect of acid-base on the stability of fine atomization slurry were studied .The results show that the silica polishing slurry prepared for the fine atomization process has better dispersion stability in the alkaline environment .Although the acid polishing slurry has higher MRR, the acid corrosion of the zirconia ceramic is too large to polish zirconia ceramic;The surface quality polished with organic alkali as a regulator after polishing is significantly better than inorganic and inorganic acids , organic acids;the alkaline polishing slurry used of ethylenediamine after fine atomization was adopted to polish zirconia ceramic , which shows a high quality ultra-smooth , low damage surface and high processing efficiency , surface roughness Rq of 1.67 nm, MRR of 182.23 nm/min.