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衬底的Al化处理对AlN性能的影响
引用本文:贾辉,石璐珊,黄鑫,叶太兵. 衬底的Al化处理对AlN性能的影响[J]. 人工晶体学报, 2017, 46(8): 1540-1544
作者姓名:贾辉  石璐珊  黄鑫  叶太兵
作者单位:公安海警学院基础部,宁波,315801;宁波市科技信息研究院,宁波,315040
基金项目:国家自然科学基金(51146005);亚热带建筑科学国家重点实验室开放课题项目(2010KA01)
摘    要:研究了衬底的Al化处理对采用MOCVD法在c面蓝宝石衬底上高温生长AlN外延层的影响机制.通过原位监测监控整个外延生长过程,同时对AlN外延层的表面形貌和晶体质量以及应变状态进行表征研究.结果表明衬底的Al化处理导致AlN外延层的表面更加平整但是晶体质量下降,同时对外延层的应变也有很明显的影响.

关 键 词:衬底的Al化处理  MOCVD  AlN  晶体质量  应变,

Effect of Al Pre-treatment to Substrate on the Properties of AlN
JIA Hui,SHI Lu-shan,HUANG Xin,YE Tai-bing. Effect of Al Pre-treatment to Substrate on the Properties of AlN[J]. Journal of Synthetic Crystals, 2017, 46(8): 1540-1544
Authors:JIA Hui  SHI Lu-shan  HUANG Xin  YE Tai-bing
Abstract:The aim of this paper is to examine the effects of TMAl preflow on the properties of AlN epitaxial layer grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using high-temperature treatments.The entire epitaxial growth process was monitored by in situ Epitt.At the same time, the surface morphology and crystal quality of AlN epitaxial layer were studied.The results show that TMAl preflow leads to the decrease of the crystal quality of the AlN epitaxial layer, and it also has a significant effect on the strain.
Keywords:The aim of this paper is to examine the effects of TMAl preflow on the properties of AlN epitaxial layer grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using high-temperature treatments.The entire epitaxial growth process was monitored by in situ Epitt.At the same time   the surface morphology and crystal quality of AlN epitaxial layer were studied.The results show that TMAl preflow leads to the decrease of the crystal quality of the AlN epitaxial layer   and it also has a significant effect on the strain.  
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