金属碲化物[Ga(en)~3]In~3Te~7晶体结构和性质的研究

以有机溶剂热生长技术(solvothermaltechnique)，即在180℃乙二胺(en)溶液中，以GaCl~3，InCl~3，Rb~2Te和Te在密闭容器中反应7d，制备出新的硫族化合物Ga(en)~3]In~3Te~7。其阴离子基团为Zintlanion:~∞^2In~3Te~7]^3^-，阳离子基团为Ga与乙二胺(en)的配合物:Ga(en)~3]^3^+。以单晶X射线衍射技术解得该晶体结构属单钭晶系，空间群为P2~1/c，(no.14)，{Ga(en)~3]In~3Te~7的晶胞数据：a=1.0460(2)nm，b=1.6981(3)nm，c=1.4994(6)nm，α=90°，β=95.46(2)°，γ=90°，V=2.651(1)nm^3，Z=4。热分析结果表明，该化合物的热分解分三步进行。光学性质测试表明它们是半导体材料，禁带宽度为1.65eV。

Crystal structure and properties of indium telluride [Ga(en)~3] In~3Te~7

Ga(en)~3]In~3Te~7(Ⅰ) has been synthesized by solvothermal technique using Rb~2Te, GaCl~3, InCl~3 and Te as starting materials and ethylenediamine as solvent at 180℃ for 7 days. The structure consists of a Zintl anion, ~∞^2In~3Te~7]^3^- and a complex cation, Ga(en)~3]^3^+. Ⅰ belongs to the monoclinic, space group P2~1/c, (no. 14), with unit cell dimensions: a=1.0460(2) nm, b=1.6981(3) nm, c=1. 4994(6) nm, α=90°, β=95.46(2)°, γ=90°, V=2.651(1) nm^3, Z=4. Optical studies were performed on the powder samples, which suggested that Ⅰ is a semiconductor with a band gap of 1.65eV. The result of TGA thermal analysis on Ⅰ indicated that the weight loss of enthylendiamine proceeded in three steps. The decomposition of Ⅰ produced Ga~2Te~3, In~2Te~3, Te and ethylenediamine as the final residues.