Giant population inversion of hot electrons in GaAs/AlAs type heterostructures with quantum wells |
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| Authors: | V Ya Aleshkin A A Andronov |
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| Institution: | (1) Institute of Microstructure Physics, Russian Academy of Sciences, 603600 Nizhnii Novgorod, Russia |
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| Abstract: | The heating of electrons in an AlxGa1−x
As/GaAs (x>0.42) heterostructure in a lateral (directed along the heterointerfaces) electric field is studied. Population inversion
on the size-quantization subbands of the Γ valley of GaAs and a giant population inversion between the X-valley states of
AlxGa1−x
As and Γ-valley states of GaAs are predicted. The possibility of using these inversions for achieving stimulated IR emission
is discussed.
Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 73–77 (10 July 1998) |
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