Electron-stimulated nitridation of Si(100) in pure ammonia |
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Authors: | OL Tarasova VG Kotlyar AA Saranin EA Khramtsova VG Lifshits |
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Institution: | Institute of Automation and Control Processes, Russian Academy of Sciences, Vladivostok 690041, Russian Federation |
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Abstract: | We present the results of an AES study of the Si(100) electron-stimulated nitridation at RT by ammonia gas. The influence of the gas pressure and electron beam density on the nitridation rate have been determined within the ranges 10?6–10?9 Torr and 5 × 10?3–5 × 10?2 A/cm2, respectively. The silicon nitride growth rate has been found to be proportional to the electron flux and is enhanced with increased ammonia pressure in the range 10?9–10?7 Torr. Beyond 10?7 Torr the Si nitride growth rate is constant and independent of ammonia pressure. A phenomenological model of electron-stimulated nitridation process is suggested, which is in good agreement with the experimental data. The rate of electron-stimulated nitridation has been deduced. |
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