Electron-stimulated nitridation of Si(100) in pure ammonia

We present the results of an AES study of the Si(100) electron-stimulated nitridation at RT by ammonia gas. The influence of the gas pressure and electron beam density on the nitridation rate have been determined within the ranges 10^?6–10^?9 Torr and 5 × 10^?3–5 × 10^?2 A/cm², respectively. The silicon nitride growth rate has been found to be proportional to the electron flux and is enhanced with increased ammonia pressure in the range 10^?9–10^?7 Torr. Beyond 10^?7 Torr the Si nitride growth rate is constant and independent of ammonia pressure. A phenomenological model of electron-stimulated nitridation process is suggested, which is in good agreement with the experimental data. The rate of electron-stimulated nitridation has been deduced.