On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

The effect of low-energy ion bombardment on CD₄/O₂ and CF₃X (X=F, Cl, Br) plasma etching has been assessed by applying controlled rf bias voltages on polystyrene (PS) and polymethylmethacrylate (PMMA) samples. In both cases ion bombardment has been found to have a chemical effect. In the case of CF₄/O₂ discharges, ion bombardment has been found to change the relative etching efficiency of different mixtures. In the case of CF₃X plasmas, ion bombardment has been found to alter PMMA and PS etch rates in a different way. In particular, the ratios between CF₄ and CF₃X (X=Cl, Br) etch rates of PS have been found to decrease with increasing bias voltage. This effect has been tentatively attributed to an ion bombardment-induced enhancement of the reaction between the aromatic ring and halogen molecules formed in CF₃Cl and CF₃Br discharges.