Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates |
| |
| Authors: | Xinman Chen Guangheng Wu Hailei Zhang Ni Qin Tao Wang Feifei Wang Wangzhou Shi Dinghua Bao |
| |
| Affiliation: | (1) Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan;(2) Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 106, Taiwan; |
| |
| Abstract: | We report on reversible bipolar resistance switching effects in multiferroic BiFeO3 thin films without electroforming. The BiFeO3 thin films with (110) preferential orientation were prepared on LaNiO3-electrodized Si substrates with a Pt/BiFeO3/LaNiO3 device configuration. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) of the devices was as high as three orders of magnitude. The dominant conduction mechanisms of LRS and HRS were dominated by ohmic behavior and trap-controlled space charge limited current, respectively. The resistance switching mechanism of the devices was discussed using a modified Schottky-like barrier model taking into account the movement of oxygen vacancies. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
