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CoSi2/Si (111) Interface study by X-ray standing waves |
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| Authors: | S Lagomarsino A Nikolaenko F Scarinci S d'Angelo J Derrien J Y Veuillen |
| Institution: | (1) Istituto di Elettronica dello Stato Solido, CNR, Via Cineto Romano 42, 00156 Roma, Italia;(2) Laboratoire d'Etudes des Propriétés Electroniques des Solides, C.N.R.S., B. P. 166, 38042 Grenoble, France;(3) Present address: Institute of Crystallography, Academy of Science of USSR, Leninsky pr. 59, 117333 Moscow, USSR;(4) Present address: CRMC2, CNRS, Campus Luminy Case 913, 13288 Marseille, France |
| Abstract: | Summary The CoSi2/Si (111) interface has been studied with the X-ray standing-wave technique. The interface (a 49? thick CoSi2 layer) has been epitaxially grown on Si (111) under ultrahigh vacuum andin situ characterized with Auger spectroscopy and low-energy electron diffraction. The perpendicular lattice mismatch between epilayer and substrate has been measured with double-crystal X-ray diffraction. The X-ray standing-wave analysis gives clear indication that the Co atoms are fivefold coordinated at the interface. This work has been partially supported by Progetto Finalizzato ?Materiali e dispositivi per l'Elettronica a Stato Solido?. |
| Keywords: | Solid-solid interfaces (including by-crystals) |
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