Etching graphitic carbon nitride by acid for enhanced photocatalytic activity toward degradation of 4-nitrophenol |
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Authors: | Si-Zhan Wu Cai-Hong Chen Wei-De Zhang |
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Institution: | School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640, China |
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Abstract: | Graphitic carbon nitride(g-C3N4) with high photocatalytic activity toward degradation of 4-nitrophenol under visible light irradiation was prepared by HCl etching followed by ammonia neutralization.The structure,morphology,surface area,and photocatalytic properties of the prepared samples were studied.After treatment,the size of the g-C3N4 decreased from several micrometers to several hundred nanometers,and the specific area of the g-C3N4 increased from 11.5 m2/g to 115 m2/g.Meanwhile,the photocatalytic activity of g-C3N4 was significantly improved after treatment toward degradation of 4-nitrophenol under visible light irradiation.The degradation rate constant of the small particle g-C3N4is5.7 times of that of bulk g-C3N4,which makes it a promising visible light photocatalyst for future applications for water treatment and environmental remediation. |
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Keywords: | Ph-otocatalyst 4-Nitrophenol Etching g-C3N4 |
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