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Influence of high-energy electron irradiation on the transport properties of La1-xCaxMnO3 films ($$(x \approx 1/3)$$ )
Authors:BI Belevtsev  VB Krasovitsky  VV Bobkov  DG Naugle  KDD Rathnayaka  A Parasiris
Institution:(1) B. Verkin Institute for Low Temperature Physics & Engineering, Kharkov, 310164, Ukraine, UA;(2) Kharkov State University, Kharkov, 310077, Ukraine, UA;(3) Department of Physics, Texas A&M University, College Station, TX 77843-4242, USA, US
Abstract:The effect of crystal lattice disorder on the conductivity and colossal magnetoresistance in La1-xCaxMnO3 ( ) films has been examined. The lattice defects are introduced by irradiating the film with high-energy ( MeV) electrons with a maximal fluence of about cm-2. This comparatively low dose of irradiation produces rather small radiation damage in the films. The number of displacements per atom (dpa) in the irradiated sample is about 10-5. Nevertheless, this results in an appreciable increase in the film resistivity. The percentage of the resistivity increase in the ferromagnetic metallic state (below the Curie temperature ) was much greater than that observed in the insulating state (above ). At the same time irradiation has much less effect on or on the magnitude of the colossal magnetoresistance. A possible explanation of such behavior is proposed. Received 21 July 1999 and Received in final form 27 December 1999
Keywords:PACS  75  30  Vn Colossal magnetoresistance - 72  80  Ga Transition-metal compounds - 72  60  +g Mixed conductivity and conductivity          transitions
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