Changes of electrical properties by Al content of AlxGa1−xAs in pHEMT structures as observed using HRXRD |
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Authors: | Hariyadi Soetedjo S Ezrol Esham Idris Sabtu Y Mohd Razman AM Abdul Fatah |
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Institution: | Microelectronic and Nano Technology Programme, TM R&D Sdn. Bhd., Idea Tower 2, UPM-MTDC, 43400 Serdang, Selangor, Malaysia |
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Abstract: | Characterizations on the pseudomorphic High Electron Mobility Transistor structure under High-Resolution X-ray Diffraction (HRXRD) have been carried out at room temperature. Variation of Al contents in AlxGa1−xAs alloys has been found to show a shift of diffraction peaks. This variation is also found to show the change of lattice constant of crystal and also sheet carrier concentration as obtained from a Hall effect measurement. The latter phenomenon is considerably interesting to study in the early stage of the electrical properties of device based on the crystal structure. |
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Keywords: | HRXRD pHEMT Lattice constant Epitaxial layer |
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