On-resistance of V-v.m.o.s. power transistors |
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Authors: | Lane W.A. Salama C.A.T. Dmitrevsky S. |
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Affiliation: | University of Toronto, Department of Electrical Engineering, Toronto, Canada; |
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Abstract: | An expression for the on-resistance of a V-groove vertical-channel m.o.s. (V-v.m.o.s.) transistor is presented. The expression relates the on-resistance to the geometry and resistivity of the drain drift region and is useful in optimising the drift region parameters for minimum on-resistance and maximum drain-source breakdown. |
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