Shallow Donor Impurity Ground State in a GaAs/AlAs Spherical Quantum Dot within an Electric Field

Using the configuration-integration methods {(CI)} [Phys. Rev.B 45 (1992) 19], we report the results of the Hydrogenic-impurity ground state in a GaAs/AlAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity groundstate as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F. We find that the ground energy and binding energy of impurity placed anywhere depend strongly on the position of impurity. Also, electric field can largely change theHydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy level and binding energyare observed from the center donor and off-center donor.