Study of the correlation between the structure and critical temperatureT
c of sputtered Nb-Ge films |
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| Authors: | A I Skvortsov N E Khlebova N I Kozlenkova B D Zheleznyakov J Růžička J Prachařová F Samek |
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| Institution: | (1) Union's Scientific and Research Institute of Inorganic Materials, Moscow, USSR;(2) Institute of Physics, Czechosl. Acad. Sci., 180 40 Praha 8, Czechoslovakia |
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| Abstract: | Nb-Ge layers with continuous change of chemical and phase composition were prepared by the d.c. sputtering method. The dependence of critical temperatureT
c on phase composition, Ge-content, lattice imperfections and composition irregularities were studied. Films with highT
c contain beside the A-15 Nb3Ge phase also the hexagonal and tetragonal modification of the Nb5Ge3 phase. Correlation betweenT
c and Nb3Ge phase composition determined from the lattice parameter was found. In samples with highestT
c the lattice parametera
0=0·5135 nm corresponding to 22–23 at.% of germanium was determined. |
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