流体静压力对高简并砷化镓P-N结某些参数的影响

本文报导了在流体静压力18000kg/cm²范围内,高简并砷化镓P-N结峯值电流l_p,谷值电流l_v,峯值电压V_p,谷值电压V_v,指数过剩电流I_x等参数随压力变化的实验结果。分析了峯值电压V_p随压力P的增加按指数规律显著减小,以及指数过剩电流I_x的斜率S=(dlnI_x)/dV随压力P的增加而增加等实验结果。分析的

PRESSURE DEPENDENCE OF SOME TUNNELING PARAMETERS IN NARROW GALLIUM ARSENIDE P-N JUNCTIONS

A study has been made on the effects of hydrostatic pressure at room temperature on peak currents I_p, valley currents l_v, peak voltages V_p, valley voltages V_v and the exponential excess currents I_x of several narrow GaAs P-N junctions. The pressure ranges from the atmospheric pressure up to 18000 Kg/cm².The exponential decrease of the peak voltage V_p and the slope S of the exponen-tial excess current (S=(dlnI_x)/dV) with the increase of pressure can be explained in termsof the pressure variations of the effective mass of GaAs. It is suggested therefore that pressure dependences of both the energy gap and the effective mass should be taken into account in analyzing the pressure dependent tunneling data of the highly degenerate GaAs P-N junctions. A brief discussion has also been made on the other experimental results.