器件与电路参数对SET波形影响仿真研究

利用Sentaurus TCAD仿真软件,建立并校准了MOSFET仿真模型。分析了NMOS器件在重离子轰击下产生的SET波形。结果表明,轰击位置在漏极且入射角呈120°时,器件具有最大的峰值电流。通过建立MIX、TCAD、SPICE三种反相器模型并施加重离子轰击,研究了不同模拟方式下电路响应对SET波形的影响,指出了采用双指数电流源在SPICE电路中模拟的不准确性。采用MIX模型探究了器件结构及电路环境对SET波形的影响。结果表明,LET能量、栅极长度、轨电压和负载电容都会对SET波形脉宽及平台电流大小产生显著影响,说明了建立SET模拟波形时须综合考虑这些因素。

Simulation Research of the Effect of MOSFET and Circuit Parameters on SET Pulse Shape

Based on Sentaurus TCAD simulation software, MOSFET simulation models were established and calibrated. The SET waveforms of NMOS devices under heavy-ion irradiation were analyzed, and the results show that the maximum peak current occurs when the radiation is located at the drain and is incident at 120°. The effect of circuit response on SET waveforms under different simulation methods was investigated by modeling three types of inverters, MIX, TCAD, and SPICE, pointing out the inaccuracy of a double-exponential current source in the simulation of SPICE circuits. The effects of MOSFET structure and circuit environment on SET waveforms were studied by using the MIX model. The results show that the LET energy, gate length, rail voltage and load capacitance all have a significant effect on the SET waveform pulse width and plateau current magnitude, illustrating the necessity of comprehensively considering these factors when building SET simulation waveforms.