| 一种低触发电压的两级防护SCR器件 |
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| 引用本文： | 张英韬,朱治华,范晓梅,毛盼,宋彬,许杞安,吴铁将,陈睿科,王耀,刘俊杰.一种低触发电压的两级防护SCR器件[J].微电子学,2022,52(1):104-108. |
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| 作者姓名： | 张英韬 朱治华 范晓梅 毛盼 宋彬 许杞安 吴铁将 陈睿科 王耀 刘俊杰 |
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| 作者单位： | 郑州大学 集成电路可靠性设计与静电防护实验室, 郑州 450000;西安理工大学 自动化与信息工程学院, 西安 710000;长鑫存储技术有限公司, 合肥 230000 |
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| 基金项目： | 国家自然科学基金资助项目(61874098) |
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| 摘 要： | 提出了一种用于降低触发电压的两级防护SCR(TSPSCR).在传统LVTSCR中植入P-ESD层,增设额外的二极管.因为P-ESD层的掺杂浓度较高,该器件能更早发生雪崩击穿而触发第一级泄流路径,从而开启第二级泄流路径.Sentaurus TCAD仿真结果表明,该器件的触发电压从传统器件的10.59 V降低至4.12 V...
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| 关 键 词： | ESD SCR 两级防护 触发电压 漏电流 |
| 收稿时间： | 2021/5/20 0:00:00 |
A Two-Stage-Protection SCR Device with Low Trigger Voltage |
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| Abstract: | A two-stage protection SCR (TSPSCR) was proposed to reduce the trigger voltage. The P-ESD layer was implanted in the traditional LVTSCR, and an additional diode was added. Because of the higher doping concentration of P-ESD layer, the device could trigger the first-stage discharge path by avalanche breakdown earlier, thus opening the second-stage discharge path. The Sentaurus TCAD simulation results showed that compared with conventional SCRs, the device had a lower trigger voltage from 10.59 V to 4.12 V, a maintenance voltage of 1.25 V, and a leakage current of 7.85 nA at 1 V DC voltage. The optimized TSPSCR could be used in advanced circuits with 1 V operating voltage. |
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