High power and high efficiency green light emitting diode on free‐standing semipolar (11$ bar 2 $2) bulk GaN substrate |
| |
| Authors: | Hitoshi Sato Anurag Tyagi Hong Zhong Natalie Fellows Roy B. Chung Makoto Saito Kenji Fujito James S. Speck Steven P. DenBaars Shuji Nakamura |
| |
| Affiliation: | 1. Materials Department and Electrical Engineering Department, University of California, Santa Barbara, CA 93106, USAPhone: +1 805 893 7790, Fax: +1 805 893 5029;2. Materials Department and Electrical Engineering Department, University of California, Santa Barbara, CA 93106, USA;3. Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi‐Mamiana, Ushiku, Ibaraki 300‐1295, Japan |
| |
| Abstract: | We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defect density semipolar (11 2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
| Keywords: | 42.72.Bj 78.55.Cr 85.60.Jb |
|
|
