p‐type conduction in stacking‐fault‐free m ‐plane GaN

Transport measurements of p‐type m ‐plane GaN films grown on low extended‐defect density, free‐standing m ‐plane (10 0) GaN substrates are presented. No significant anisotropy in in‐plane mobility was found for hole concentrations between 2.45 × 10¹⁷ and 8.7 × 10¹⁸ cm^–3. Since faulted, heteroepitaxial m ‐plane films showed significant anisotropy in electron and hole mobility a microstructural feature with anisotropic distribution (basal plane stacking faults) is discussed as a possible source of anisotropic scattering in non‐polar and semi‐polar films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)