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Growth and characterisation of high quality MBE grown InNx Sb1–x |
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| Authors: | P H Jefferson L Buckle D Walker T D Veal S Coomber P A Thomas T Ashley C F McConville |
| Institution: | 1. Department of Physics, University of Warwick, Coventry CV4 7AL, UK;2. QinetiQ Ltd. St. Andrews Road, Malvern, Worcs WR14 3PS, UK;3. Department of Physics, University of Warwick, Coventry CV4 7AL, UKPhone: +44 (0)24 7652 4236, Fax: +44 (0)24 7669 2016 |
| Abstract: | The growth, structural and optical characterisation of dilute nitride alloys of InSb grown by plasma‐assisted molecular beam epitaxy is presented. The layers were characterised by high‐resolution X‐ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fourier‐transform infrared absorption measurements reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss–Burstein band filling.  |
| Keywords: | 61 10 Nz 71 20 Nr 78 20 Ci 78 30 Fs 81 15 Hi |