Ultra‐high long‐term stability of oxide‐TTFTs under current stress |
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| Authors: | T Riedl P Görrn P Hölzer W Kowalsky |
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| Institution: | 1. Institut für Hochfrequenztechnik, Technische Universit?t Braunschweig, 38092 Braunschweig, GermanyPhone: +49‐531‐3912008, Fax: +49‐531‐3912045;2. Institut für Hochfrequenztechnik, Technische Universit?t Braunschweig, 38092 Braunschweig, Germany |
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| Abstract: | In this letter the stability of transparent thin‐film transistors (TTFTs) based on the ZnO–SnO2 (ZTO) material system is investigated. Bottom‐gate devices have been subject to electrical stress via a gate–source bias of 10 V and a drain‐source bias of 10 V leading to a drain–source current of 188 µA. In optimized TTFTs with a composition of Zn]:Sn] = 36:64 the relative change of the saturated field effect mobility was less than 1% and the threshold voltage shift was about 320 mV after 1000 hours of operation. This extraordinary stability of ZTO TTFTs underlines their suitability as drivers in active matrix OLED displays. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 72 80 Ey 73 61 Ga 81 15 Fg 85 30 Tv |
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