Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy |
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| Authors: | S Sohal M Edirisooriya O S Ogedengbe J E Petersen C H Swartz E G LeBlanc T H Myers J V Li M Holtz |
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| Institution: | 1.Materials Science, Engineering, and Commercialization Program,Texas State University,San Marcos,USA;2.Department of Physics,Texas State University,San Marcos,USA |
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| Abstract: | Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ～7 × 1015 cm?3, 8.4 × 1016 cm?3, and 8.4 × 1017 cm?3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ～8 × 1015 cm?3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm?3 and 8.4 × 1016 cm?3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. The observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination. |
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