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自发有序Ga_(0.5)In_(0.5)P合金的喇曼光谱研究
引用本文:李国华,董建荣,等.自发有序Ga_(0.5)In_(0.5)P合金的喇曼光谱研究[J].光散射学报,1996,8(1):6-11.
作者姓名:李国华  董建荣
作者单位:[1]半导体超晶格国家重点实验室中国科学院半导体研究所,北京100083 [2]半导体材料科学实验室中国科学院半导体研究所,北京100083
摘    要:在室温和非共振条件下测量了自发有序Ga0.5In0.5P合金的喇曼散射谱。测得的380,360和330cm-1附近的三个散射峰分别归结于合金中的类GaP的LO模、类InP的LO模和TOM。发现有序合金的类GaP的LO模的声子频率随着合金的带隙能量的降低而增大。认为这与在有序合金中形成沿[111]方向的(GSP)1/(InP)1单层超晶格有一定联系。在几种偏振配置下测得的有序合金的喇曼谱的偏振特性与通常的闪锌矿结构的半导体材料的偏振特性类似。

关 键 词:喇曼散射,有序合金,Ga_xIn_(1-x)P

Raman Scattering of Spontaneously Ordered Ga_0.5In0.5P Alloy
Li Guohua, Liu Zhenxian, Han Hexiang, Wang Zhaoping.Raman Scattering of Spontaneously Ordered Ga_0.5In0.5P Alloy[J].Chinese Journal of Light Scattering,1996,8(1):6-11.
Authors:Li Guohua  Liu Zhenxian  Han Hexiang  Wang Zhaoping
Abstract:Raman scattering has been measured at room temperature for spontaneously ordered Ga0.5In0.5P alloy. Three peaks have been observed in the Raman spectra,corresponding to the GaP- like LO(~ 380cm-1 ),InP-like LO(~ 360cmf-1 )and TO.(~ 330mm-1 )mode in the alloy, respectively. The GaPlike LO mode frequency increases with the concurrent decrease of the bandgapof the ordered alloys. It is related to the formation of the (GaP)1/(InP)1 single layer superlattice in the ordered alloy along 111] direction. The polarization properties of the ordered alloy are similar to those of the bulk Ⅲ-Ⅴ semiconductors.
Keywords:Raman scattering ordered alloy Ga_xIn_(1-x)P
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