Significantly Improved Colossal Dielectric Properties and Maxwell—Wagner Relaxation of TiO2—Rich Na1/2Y1/2Cu3Ti4+xO12 Ceramics

In this work, the colossal dielectric properties and Maxwell—Wagner relaxation of TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ (x = 0–0.2) ceramics prepared by a solid-state reaction method are investigated. A single phase of Na_1/2Y_1/2Cu₃Ti₄O₁₂ is achieved without the detection of any impurity phase. The highly dense microstructure is obtained, and the mean grain size is significantly reduced by a factor of 10 by increasing Ti molar ratio, resulting in an increased grain boundary density and hence grain boundary resistance (R_gb). The colossal permittivities of ε′ ~ 0.7–1.4 × 10⁴ with slightly dependent on frequency in the frequency range of 10²–10⁶ Hz are obtained in the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics, while the dielectric loss tangent is reduced to tanδ ~ 0.016–0.020 at 1 kHz due to the increased R_gb. The semiconducting grain resistance (R_g) of the Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics increases with increasing x, corresponding to the decrease in Cu⁺/Cu²⁺ ratio. The nonlinear electrical properties of the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics can also be improved. The colossal dielectric and nonlinear electrical properties of the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics are explained by the Maxwell–Wagner relaxation model based on the formation of the Schottky barrier at the grain boundary.