Enhanced single-fundamental LP01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs |
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Authors: | ?ukasz Piskorski Robert P Sarza?a and W?odzimierz Nakwaski |
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Institution: | (1) Institute of Physics, Technical University of ód , ul. Wólcza ska 219, 93-005 ód , Poland;(2) Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland;(3) Center for High Technology Materials, University of New Mexico, Albuquerque, NM, USA |
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Abstract: | Minimal optical attenuation of plastic (polymer) optical fibres (POFs) corresponds to the 650-nm wavelength. Currently the
GaInP/AlGaInP quantum-well (QW) oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) are undoubtedly
the laser devices most suited to be used in 650-nm POF optical communication, for which the stable single-fundamental-mode
LP01 emission (SFM) is definitely the one most desired. In the present paper, the comprehensive fully self-consistent VCSEL model
is used to examine mode selectivity of the above VCSELs. An increase in the VCSEL active-region diameter leads to a gradual
modification of the current injection into this region and subsequent carrier radial diffusion within it before their recombination,
which is followed by an essential transformation of active-region optical-gain profiles deciding upon an excitation of successive
transverse modes. In standard arsenide OC VCSELs, SFM operation is usually limited to relatively small active regions. But
for a room-temperature continuous-wave operation of the GaInP/AlGaInP VCSELs, the fundamental LP01 mode remains surprisingly the lowest-threshold one up to relatively large active regions of 9-μm diameters. Nevertheless,
in such VCSELs, thresholds of many LP modes become very similar to one another, which leads to their relatively poor mode
selectivity and an unwanted multi-mode operation for higher output powers. |
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Keywords: | |
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