High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35 μm CMOS process |
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Authors: | PM Santos Vitor Costa MC Gomes Beatriz Borges Mário Lança |
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Institution: | a Instituto de Telecomunicações, Av. Rovisco Pais, 1049-001 Lisboa, Portugal b Instituto Superior de Engenharia de Lisboa, R. Cons. Emídio Navarro, 1959-007 Lisboa, Portugal c Instituto Superior Técnico, Av. Rovisco Pais, 1049-001 Lisboa, Portugal |
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Abstract: | This work presents the design of LDMOS transistors fully compatible with a standard CMOS process, only requiring mask layout manipulation. A conventional 0.35 μm CMOS process was elected to demonstrate the viability of the approach. The prototyped LDMOS transistor exhibits a breakdown voltage of 24 V, which represents an improvement of 31% when compared with the high-voltage extended-drain NMOS available in the process library, while other static parameters remain in the same range. Furthermore, this solution enables the CMOS integration of a high-voltage pass-transistor, as a consequence of the formation of an isolated lightly doped p-type region inside the n-well. |
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Keywords: | High-voltage CMOS MOSFET switch LDMOS |
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