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Simulation and analysis of metamorphic high electron mobility transistors |
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| Authors: | Jia-Chuan Lin Po-Yu Yang |
| Institution: | a Department of Electronics Engineering, St. John's University, Taipei 25135, Taiwan R.O.C. b Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 300, Taiwan R.O.C. c Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan R.O.C. |
| Abstract: | In this paper, the metamorphic high electron mobility transistors (mHEMTs) are investigated numerically and compared with pseudo-morphic high electron mobility transistors (pHEMTs). The two-dimensional device simulator, MEDICI, is used to solve the Poisson's equation and the electron/hole current continuity equations. The influences of δ-doping concentration and position, gate width, spacer thickness, etc. on the performances of HEMTs are explored. It shows clearly that mHEMTs have higher transconductances, drain currents and DC voltage swings than pHEMTs. |
| Keywords: | High electron mobility transistor Metamorphic high electron mobility transistor Pseudo morphic high electron mobility transistor δ-doping MEDICI |
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