Structural characterisation of CdS layers deposited on porous p-type GaAs

The purpose of this paper is to investigate the initial stage of cadmium sulphide (CdS) layer deposited on porous p-type GaAs substrate by vacuum evaporation technique. The deposited CdS layer was investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM imaging shows that the CdS was penetrated deeply in the porous structure down to the bottom and reaching the interface GaAs/porous GaAs. The AFM image demonstrates that the CdS deposited are grains of several nanometres and XRD patterns exhibit that the deposited layer has a hexagonal prominent phase.