DFT studies of Si- and Al-doping effects on the acetone sensing properties of BC3 graphene |
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Authors: | Morteza Moradi Maziar Noei |
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Institution: | 1. Department of Semiconductors, Materials and Energy Research Center, Karaj, Iran;2. Department of Chemistry, Mahshahr Branch, Islamic Azad University, Mahshahr, Iran |
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Abstract: | In order to find a novel sensor, reactivity and sensitivity of the intrinsic, Al- and Si-doped BC3 graphene-like sheets to an acetone molecule were investigated by using B3LYP and ωB97X-D density functional calculations. Adsorption of acetone on the intrinsic, Al- and Si-doped BC3 sheets releases energies of about 7.2, 36.5 and 24.8 kcal/mol, respectively, using ωB97X-D. The Si-doped sheet presents high sensitivity to acetone compared with the intrinsic and Al-doped sheets indicated by the calculated geometrical structures and electronic properties for these systems. The HOMO/LUMO energy gap of Si-doped BC3 sheet is significantly decreased from 2.20 to 1.65 eV (B3LYP), which would result in electrical conductance increment. Thus, Si-doped sheet are expected to be a potential candidate for detecting the presence of acetone. |
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Keywords: | sensor doping graphene DFT theoretical study |
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