| 不同掺杂类型的GaN间隔层和量子阱垒层对双波长LED作用的研究 |
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| 引用本文： | 张运炎,范广涵.不同掺杂类型的GaN间隔层和量子阱垒层对双波长LED作用的研究[J].物理学报,2011,60(1):18502-018502. |
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| 作者姓名： | 张运炎 范广涵 |
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| 作者单位： | 华南师范大学光电子材料与技术研究所,广州 510631 |
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| 基金项目： | 2009年省部产学研结合引导项目(批准号:2009B090300338),粤港关键领域重点突破项目(批准号:2007A010501008)和教育部博士点基金项目(批准号: 350163) 资助的课题. |
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| 摘 要： | 采用软件理论分析的方法对不同掺杂类型的GaN间隔层和量子阱垒层在InGaN/GaN多量子阱双波长发光二极管中对发光光强、内量子效率、电子空穴浓度分布、溢出电流等作用进行模拟分析. 分析结果表明,p型掺杂的GaN间隔层与量子阱垒层的引入同不掺杂和n型掺杂两种类型比较,可以大大减少溢出电子流,极大地提高各量子阱内空穴浓度,提高双波长发光二极管的发光强度,极大的改善内量子效率随电流增大而下降问题.
关键词：
GaN
掺杂类型
数值模拟
双波长发光二极管
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| 关 键 词： | GaN 掺杂类型 数值模拟 双波长发光二极管 |
| 收稿时间： | 2010-03-14 |
| 修稿时间： | 5/4/2010 12:00:00 AM |
Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED |
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| Zhang Yun-Yan,Fan Guan-Han.Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED[J].Acta Physica Sinica,2011,60(1):18502-018502. |
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| Authors: | Zhang Yun-Yan Fan Guan-Han |
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| Institution: | Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
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| Abstract: | A 2D simulation of electrical and optical characteristics of dual-wavelength LED with GaN interval layers and quantum well barrier layers of different doping types was conducted with APSYS software. It showed that with the use of p-type doped GaN interval layer and quantum well barrier layers, we can greatly improve the hole concentration in QWs and reduce the electron overflow of the chip. We can also increase the luminous intensity and dramatically improve the dropping of internal quantum efficiency of the LED when the current increases. |
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| Keywords: | GaN doping types numerical simulation dual-wavelength LED |
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