低维半导体异质结构光电探测材料及器件验证

面向国家"战略性先进电子材料"的发展目标,以国家重大战略需求,如全球气候观测、农林普查、国土资源探测、环境监测、深空探测和天文观测等领域的技术发展中面临的光探测器瓶颈问题为突破口,瞄准半导体材料及其光探测器正在朝全光谱覆盖、大面阵、高灵敏等方向快速发展的国际态势,开展低维半导体异质结构材料与光电器件研究,发展该体系材料人工设计精细调控的关键技术,推动多波段多种类型的光电探测器技术进步,促进我国经济、社会、国家安全及科学技术的发展.

Low dimensional semiconductor hetero-structure photoelectric detecting materials and devices

The national major strategic needs such as the global climate observation, agricultural census, land resources exploration, environmental monitoring, deep space exploration and astronomical observation are facing the bottleneck of photodetectors. Semiconductor materials and photodetectors are rapidly developing in the direction of full-spectrum, large-array and high sensitivity, which meets the development goals of the national "strategic advanced electronic materials". In the project, low dimensional semiconductor hetero-structure photoelectric materials and devices are investigated. Materials are artificially fine-tuned to promote the technological improvements of multi-bands and multi-types of photodetectors, which is useful for the development of economy, society, national security, science and technology.