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Light-emitting structures based on nanocrystalline (Si/CaF2) multiquantum wells |
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| Authors: | A G Nassiopoulou V Tsakiri V Ioannou-Sougleridis P Photopoulos S Menard F Bassani F Arnaud d' Avitaya |
| Institution: | a Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, 153 10 Aghia Paraskevi, Athens, Greece b CRMC2/CNRS, Campus de Luminy, Case 913, F-13288 Marseille cedex 9, France |
| Abstract: | Periodic nanocrystalline (Si/CaF2) multilayers, deposited on (111) silicon by Molecular Beam Epitaxy (MBE) at room temperature, were used to fabricate simple light emitting structures and to study their electrical and optoelectronic properties. Photoluminescence (PL) and electroluminescence (EL) spectra from the same area of the devices are approximately the same, indicative of the same emission mechanism. Current–voltage characteristics reveal important phenomena in vertical carrier transport. Regions of negative differential resistance and current oscillations were observed and were tentatively attributed to resonant tunneling at high electric fields under field domain formation. |
| Keywords: | Calcium fluoride Multiquantum well Nanocrystalline Si Electroluminescence LED |
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