The effects of temperature and frequency on the magnetization switching mode in circular MI sensors |
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Authors: | Kwaku Eason Kok-Meng Lee |
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Institution: | a Data Storage Insititute, 5 Engineering Drive I, Singapore 117600, Singapore b The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405, USA |
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Abstract: | This paper presents results computed using a meshless method in a point collocation formulation to investigate the effects of temperature and frequency on the magnetization switching mode in the circular amorphous magneto-impedance sensor (element). Specifically, the solutions characterizing the MI effect are solved from a set of coupled nonlinear equations consisting of the Maxwell’s equations, the Landau-Lifshitz-Gilbert equation, and the thermal diffusion equation. This coupled nonlinear space-time model predicts the formation and propagation of dynamic domain walls in switching and it is shown how they contribute to experimentally observed temperature and frequency effects. Computed results (that agree well with reported experimental data) suggest radial domain walls may play a larger role in the MI effect than originally believed even for the realistic conditions considered here at 1 MHz or more. |
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Keywords: | Magneto-impedance effect Radial domain walls Meshless methods Switching mode Coupled nonlinear micromagnetics |
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