MOMBE GaAs and AlGaAs for microelectronic devices |
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| Authors: | S D Hersee L Yang M Kao P Martin J Mazurowski A Chin J Ballingall |
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| Institution: | GE, Electronics Laboratory, Syracuse, New York 13221, USA |
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| Abstract: | This paper reviews the state of the art of GaAs and AlGaAs materials and microelectronic devices grown by MOMBE (metalorganic molecular beam epitaxy) and related techniques. FET, HEMT and HBT devices have been grown using MOMBE and in the case of FETs and HBTs excellent device and MMIC power performance has been obtained. For example, MOMBE HBTs show current gains in excess of 100 and MMIC power HBT circuits are delivering 2 W of power at 8.5 GHz. We will examine device behavior and relate this to properties of the GaAs and AlGaAs materials. |
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